مرکز منطقه ای اطلاع رساني علوم و فناوري - An experimental study on the thermal stability of sputtered TiN gates for gate-first FinFETs

DocumentCode :

3283857

Title :

An experimental study on the thermal stability of sputtered TiN gates for gate-first FinFETs

Author :

Liu, Y.X. ; Sugimata, E. ; Matsukawa, T. ; Masahara, M. ; Endo, K. ; Ishii, K. ; Shimizu, T. ; Suzuki, E.

fYear :

2005

fDate :

Dec. 7-9, 2005

Firstpage :

201

Lastpage :

202

Keywords :

Annealing; Capacitance-voltage characteristics; Doping; Fabrication; FinFETs; MOSFETs; Nitrogen; Thermal stability; Threshold voltage; Tin;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Semiconductor Device Research Symposium, 2005 International

Print_ISBN :

1-4244-0083-X

Type :

conf

DOI :

10.1109/ISDRS.2005.1596052

Filename :

1596052

Link To Document :