DocumentCode

3283892

Title

Design Guideline of Multi-Gate MOSFETs Considering Body Effect

Author

Nagumo, Toshiharu ; Hiramoto, Toshiro

fYear

2005

fDate

Dec. 7-9, 2005

Firstpage

205

Lastpage

206

Keywords

Capacitance; Design methodology; Electron beams; FinFETs; Guidelines; Leakage current; Lithography; MOSFETs; Shape; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2005 International

Print_ISBN

1-4244-0083-X

Type

conf

DOI

10.1109/ISDRS.2005.1596054

Filename

1596054