Title :
Electrical Characterization of Defects in High-k Gate Dielectrics
Author_Institution :
National Inst. of Stand. & Technol., Gaithersburg, MD
Abstract :
This paper describes the electrical characterization of defects in high-k dielectrics using a variety of techniques including capacitance-voltage, conductance, and charge-pumping, and the impact of these defects on MOS device behavior
Keywords :
MIS devices; MOSFET; dielectric materials; MOS device behavior; charge pumping; defect characterization; electrical characterization; high-k gate dielectrics; Capacitance-voltage characteristics; Charge pumps; Current measurement; Dielectric devices; Dielectric substrates; Frequency dependence; Hafnium oxide; High-K gate dielectrics; Interface states; Photonic band gap;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Conference_Location :
Bethesda, MD
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1596056
