• DocumentCode
    3283938
  • Title

    Electrical Characterization of Defects in High-k Gate Dielectrics

  • Author

    Vogel, Eric M.

  • Author_Institution
    National Inst. of Stand. & Technol., Gaithersburg, MD
  • fYear
    2005
  • fDate
    7-9 Dec. 2005
  • Firstpage
    209
  • Lastpage
    210
  • Abstract
    This paper describes the electrical characterization of defects in high-k dielectrics using a variety of techniques including capacitance-voltage, conductance, and charge-pumping, and the impact of these defects on MOS device behavior
  • Keywords
    MIS devices; MOSFET; dielectric materials; MOS device behavior; charge pumping; defect characterization; electrical characterization; high-k gate dielectrics; Capacitance-voltage characteristics; Charge pumps; Current measurement; Dielectric devices; Dielectric substrates; Frequency dependence; Hafnium oxide; High-K gate dielectrics; Interface states; Photonic band gap;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2005 International
  • Conference_Location
    Bethesda, MD
  • Print_ISBN
    1-4244-0083-X
  • Type

    conf

  • DOI
    10.1109/ISDRS.2005.1596056
  • Filename
    1596056
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3283938