DocumentCode :
3283956
Title :
Highly Reliable High-k Gate Dielectrics with Gradual Hf-profile in the HfO2/SiO2 Interface Region
Author :
Iwamoto, K. ; Mizubayashi, W. ; Ogawa, A. ; Nabatame, T. ; Satake, H. ; Toriumi, A.
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
211
Lastpage :
212
Keywords :
Annealing; Atomic layer deposition; Circuits; Degradation; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOSFETs; Semiconductor films; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1596057
Filename :
1596057
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3283956
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