Title :
Trapping in Deep Defects under Substrate Hot Electron Stress in TiN/Hf-silicate Based Gate Stacks
Author :
Chowdhury, N.A. ; Srinivasan, P. ; Misra, D.
Keywords :
Capacitance-voltage characteristics; Dielectrics; Electron traps; Energy states; MOCVD; Photonic band gap; Reliability engineering; Stress; Temperature; Tin;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1596058
