Temperature-dependent Radiative Lifetimes of Excitons in Non-polar GaN/AlGaN Quantum Wells

Author

Rudin, S. ; Garrett, G.A. ; Shen, H. ; Wraback, M. ; Imer, B. ; Haskell, B. ; Speck, J.S. ; Keller, S. ; Nakamura, S. ; DenBaars, S.P.

Author_Institution

U.S. Army Res. Lab., Adelphi, MD

fYear

2005

fDate

7-9 Dec. 2005

Firstpage

225

Lastpage

226

Abstract

Nonpolar GaN/AlGaN multiple quantum wells (MQW) have shown an improved quantum efficiency due to better wave function overlap in the absence of the large polarization fields normally found in their c-plane counterparts. Here we report theoretical and experimental studies of radiative recombination of carriers in GaN quantum wells grown on low defect a-plane GaN templates fabricated by lateral epitaxial overgrowth. The calculated radiative rates are presented as functions of temperature and well width. We also evaluated the dependence of the radiative lifetimes on carrier density in the quantum well by including effects of screening and phase-space filling in the evaluation of the exciton oscillator strength

Keywords

III-V semiconductors; aluminium compounds; carrier density; excitons; gallium compounds; radiative lifetimes; semiconductor quantum wells; wide band gap semiconductors; GaN-AlGaN; carrier density; carriers radiative recombination; exciton oscillator strength; lateral epitaxial overgrowth; multiple quantum wells; nonpolar quantum wells; phase-space filling; quantum efficiency; radiative lifetimes; screening effect; Aluminum gallium nitride; Charge carrier density; Excitons; Gallium nitride; Polarization; Quantum mechanics; Quantum well devices; Radiative recombination; Temperature; Wave functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2005 International

Conference_Location

Bethesda, MD

Print_ISBN

1-4244-0083-X

Type

conf

DOI

10.1109/ISDRS.2005.1596065

Filename

1596065