Interface passivation of Silicon Dioxide layers on Silicon Carbide

In this paper, the problem of high interface traps at the SiO₂/SiC interface is introduced and their possible cause and physical nature are discussed. Different state-of-the-art approaches to chemically modify the interface for ´passivating´ such electrically active traps is reviewed. In particular, the significant improvement of the interface by nitridation via nitric oxide post-oxidation annealing is highlighted. Correlations between electrical and physical measurements, which reveal the role of nitrogen in the passivation process, are discussed. Results presented for oxides grown on the conventional (0001) Si-face as well as other ´alternate´ crystal faces. Recent work on the use of hydrogenation to obtain additional passivation for nitridated interfaces is also introduced. Finally, the major unresolved issues and opportunities for further research and development on this subject are indicated