• DocumentCode
    3284198
  • Title

    Low Leakage Current Transport and High Breakdown Strength of HfO2/SiC MIS Device Structures

  • Author

    Hullavarad, S.S. ; Jones, E.B. ; Vispute, R.D. ; Venkatesan, T.

  • fYear
    2005
  • fDate
    Dec. 7-9, 2005
  • Firstpage
    238
  • Lastpage
    239
  • Keywords
    Dielectric constant; Dielectric materials; Electric breakdown; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Leakage current; MIS devices; Silicon carbide; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2005 International
  • Print_ISBN
    1-4244-0083-X
  • Type

    conf

  • DOI
    10.1109/ISDRS.2005.1596072
  • Filename
    1596072
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3284198