Transport in kinked bi-layer graphene interconnects

We present transport experiments on kinked bi-layer graphene nanoribbon interconnects. The studied devices consist of approximately 80 nm wide and 1 μm long bi-layer graphene nanoribbons with different lateral kink angles. We discuss the ambipolar transport characteristics and we show a systematic dependence of the overall conductance with the kink angle, i.e. with the shape of the etched bi-layer graphene nanoribbon. The measurements can be well described with the self-consistent Boltzmann equation for diffusive transport where the kinked angle appears to have an influence on the effective charge carrier mobility, thus revealing the presence of geometry-dependent ballistic transport effects. These results are crucial for the design and fabrication of future single-layer or bi-layer graphene interconnects in potential all-carbon monolithic systems.