• DocumentCode
    328428
  • Title

    Linear MOSFET-C integrators using a single triode region MOS resistance

  • Author

    Brannen, Robert A. ; Elwan, Hassan ; Ismail, Mohammed

  • Author_Institution
    Dept. of Electr. Eng., Ohio State Univ., Columbus, OH, USA
  • fYear
    1998
  • fDate
    30 Sep-3 Oct 1998
  • Firstpage
    121
  • Lastpage
    124
  • Abstract
    The design of MOSFET-C continuous time integrators is presented. Each integrator comprise one triode region MOSFET, one active element (either an opamp or current follower), and one capacitor. Linearity is achieved by maintaining a small DC value for Vds, and applying the large signal input to the gate. Analytical expressions are developed, and simulation results are provided to illustrate the theory. Experimental results from an opamp and current follower based biquadratic filters are included to support theoretical claims
  • Keywords
    MOS analogue integrated circuits; biquadratic filters; continuous time filters; integrating circuits; active element; biquadratic filters; continuous time integrators; current follower; large signal input; linear MOSFET-C integrators; single triode region MOS resistance; Analytical models; Capacitance; Capacitors; Degradation; Dynamic range; Electric resistance; MOSFET circuits; Temperature; Transconductance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Circuit Design, 1998. Proceedings. XI Brazilian Symposium on
  • Conference_Location
    Rio de Janeiro
  • Print_ISBN
    0-8186-8704-5
  • Type

    conf

  • DOI
    10.1109/SBCCI.1998.715424
  • Filename
    715424
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=328428