Title :
Linear MOSFET-C integrators using a single triode region MOS resistance
Author :
Brannen, Robert A. ; Elwan, Hassan ; Ismail, Mohammed
Author_Institution :
Dept. of Electr. Eng., Ohio State Univ., Columbus, OH, USA
fDate :
30 Sep-3 Oct 1998
Abstract :
The design of MOSFET-C continuous time integrators is presented. Each integrator comprise one triode region MOSFET, one active element (either an opamp or current follower), and one capacitor. Linearity is achieved by maintaining a small DC value for Vds, and applying the large signal input to the gate. Analytical expressions are developed, and simulation results are provided to illustrate the theory. Experimental results from an opamp and current follower based biquadratic filters are included to support theoretical claims
Keywords :
MOS analogue integrated circuits; biquadratic filters; continuous time filters; integrating circuits; active element; biquadratic filters; continuous time integrators; current follower; large signal input; linear MOSFET-C integrators; single triode region MOS resistance; Analytical models; Capacitance; Capacitors; Degradation; Dynamic range; Electric resistance; MOSFET circuits; Temperature; Transconductance; Voltage;
Conference_Titel :
Integrated Circuit Design, 1998. Proceedings. XI Brazilian Symposium on
Conference_Location :
Rio de Janeiro
Print_ISBN :
0-8186-8704-5
DOI :
10.1109/SBCCI.1998.715424
