DocumentCode :
3284464
Title :
Fluorinated ALD Al
2
O
3
Gate Dielectrics by CF
4
Plasma
Author :
Lai, Chao Sung ; Fan, Kung Ming ; Chen, Yi Jung ; Su, Kuo Hui ; Wu, Chang Rong ; Lin, Shian Jyh ; Lee, Chung-Yuan
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
266
Lastpage :
267
Keywords :
CMOS technology; Chaos; Dielectric films; Dielectric substrates; Electric breakdown; Electric variables; Hysteresis; Plasma measurements; Plasma properties; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1596087
Filename :
1596087
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3284464
