• DocumentCode
    3284516
  • Title

    CMOS Compatibility of Crystalline Gd2Osub 3/ High-K / Metal Gate Stacks

  • Author

    Gottlob, H.D.B. ; Echtermeyer, T. ; Mollenhauer, T. ; Efavi, J. ; Schmidt, M. ; Wahlbrink, T. ; Lemme, M.C. ; Kurz, H.

  • fYear
    2005
  • fDate
    Dec. 7-9, 2005
  • Firstpage
    276
  • Lastpage
    277
  • Keywords
    Amorphous materials; CMOS process; Crystallization; Electrodes; High K dielectric materials; High-K gate dielectrics; Leakage current; Nickel; Plasma chemistry; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2005 International
  • Print_ISBN
    1-4244-0083-X
  • Type

    conf

  • DOI
    10.1109/ISDRS.2005.1596092
  • Filename
    1596092
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3284516