DocumentCode :
3284516
Title :
CMOS Compatibility of Crystalline Gd
2
Osub 3/ High-K / Metal Gate Stacks
Author :
Gottlob, H.D.B. ; Echtermeyer, T. ; Mollenhauer, T. ; Efavi, J. ; Schmidt, M. ; Wahlbrink, T. ; Lemme, M.C. ; Kurz, H.
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
276
Lastpage :
277
Keywords :
Amorphous materials; CMOS process; Crystallization; Electrodes; High K dielectric materials; High-K gate dielectrics; Leakage current; Nickel; Plasma chemistry; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1596092
Filename :
1596092
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3284516
