NEMS nanostructures with enhanced piezoresistive and piezoelectric properties. Application to sensor devices and energy harvesting

Author

Montès, L. ; Hinchet, R. ; Xu, X. ; Potié, A. ; Lee, J.W. ; Ardila, G. ; Baron, T. ; Mouis, M. ; Songmuang, R.

Author_Institution

IMEP-LAHC, Grenoble Inst. of Technol., Grenoble, France

fYear

2011

fDate

20-23 Feb. 2011

Firstpage

1064

Lastpage

1066

Abstract

In this paper we present how piezoresitive and piezoelectric effects could be significantly enhanced in semiconductor nanostructures, and more specifically in nano heterostructures. Simulations results from analytical, multiphysics and finite element methods are presented. A new AFM method to directly measure the piezoelectric effect in nanowires is also introduced. Finally sensor and energy harvesting structures are derived from this larger sensitivity of these nanostructures, exploiting size and quantum effects.

Keywords

energy harvesting; finite element analysis; nanosensors; nanowires; piezoelectricity; piezoresistance; semiconductor quantum wires; NEMS nanostructures; energy harvesting structures; finite element method; multiphysics; nano heterostructures; nanowires; piezoelectric effect; piezoelectric property; piezoresistive property; quantum effects; semiconductor nanostructures; sensor devices; Gallium nitride; Nanowires; Preamplifiers; Sensitivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Nano/Micro Engineered and Molecular Systems (NEMS), 2011 IEEE International Conference on

Conference_Location

Kaohsiung

Print_ISBN

978-1-61284-775-7

Type

conf

DOI

10.1109/NEMS.2011.6017540

Filename

6017540