DocumentCode
3284578
Title
Large-Signal Modeling of SiC-Based RF MESFET
Author
Mukherjee, Sankha S. ; Islam, Syed S.
fYear
2005
fDate
Dec. 7-9, 2005
Firstpage
286
Lastpage
287
Keywords
Capacitance; Conducting materials; Dielectric materials; Gain; MESFETs; Power generation; Radio frequency; Silicon carbide; Thermal conductivity; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2005 International
Print_ISBN
1-4244-0083-X
Type
conf
DOI
10.1109/ISDRS.2005.1596097
Filename
1596097
Link To Document