DocumentCode :
3284612
Title :
Parameter Extraction and SPICE Model Development for 4H-Silicon Carbide (SiC) Power MOSFET
Author :
Hasanuzzaman, Md ; Islam, Syed K. ; Alam, Mohmmad T.
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
292
Lastpage :
293
Keywords :
Capacitance; Circuit testing; Electrical resistance measurement; MOSFET circuits; Parameter extraction; Power MOSFET; Power system modeling; SPICE; Silicon carbide; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1596100
Filename :
1596100
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3284612
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