DocumentCode
3284680
Title
The Effects of Implanting Al and Al and C at Different Temperatures in Different Concentrations into SiC
Author
Stepp, D. ; Jones, K.A. ; Zheleva, T.S. ; Derenge, M.A. ; Vispute, R.D. ; Hullavarad, S. ; Dar, S.
fYear
2005
fDate
Dec. 7-9, 2005
Firstpage
298
Lastpage
299
Keywords
Annealing; Conductivity; Electric variables measurement; Implants; Ionization; Physics; Sheet materials; Silicon carbide; Stacking; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2005 International
Print_ISBN
1-4244-0083-X
Type
conf
DOI
10.1109/ISDRS.2005.1596103
Filename
1596103
Link To Document