Growth and characterization of Cd/sub 0.22/Zn/sub 0.78/S thin films prepared by spray pyrolysis method :Optical and structural properties

Author

Baykul, M.C. ; Orhan, N. ; Gulec, A.

Author_Institution

Dept. of Phys., Eskisehir Osmangazi Univ.

fYear

2005

fDate

7-9 Dec. 2005

Firstpage

304

Lastpage

304

Abstract

Cd_0.22Zn_0.78S thin films have been grown on a glass substrate by the spray pyrolysis method using CdCl₂ (0.05 M), ZnCl₂ (0.05 M) and HNCSNH (0.05 M) solutions at a substrate temperature of 261plusmn6degC. The band gap of Cd_0.22Zn_0.78S was obtained from the absorbance measurements in the visible range and found to be 3.24 eV. The energy band gap was also determined from the theory of Elliot and Toyozawa as 3.28 eV. X-ray diffraction studies have shown that the CdS grains also formed during the deposition of Cd_0.22Zn_0.78S thin films. Morphological studies of the Cd_0.22Zn_0.78S thin films were studied by AFM and SEM. Local elemental characterization of the thin film was performed by EDX

Keywords

II-VI semiconductors; X-ray chemical analysis; X-ray diffraction; atomic force microscopy; cadmium compounds; optical properties; pyrolysis; scanning electron microscopy; semiconductor growth; semiconductor thin films; zinc compounds; 3.24 eV; 3.28 eV; Cd_0.22Zn_0.78S; CdCl₂; HNCSNH; X-ray diffraction; ZnCl₂; absorbance measurement; energy band gap; glass substrate; optical property; spray pyrolysis method; structural property; thin film growth; Glass; Optical films; Photonic band gap; Spraying; Sputtering; Substrates; Temperature; Transistors; X-ray diffraction; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2005 International

Conference_Location

Bethesda, MD

Print_ISBN

1-4244-0083-X

Type

conf

DOI

10.1109/ISDRS.2005.1596106

Filename

1596106