Title :
AlGaN/GaN HEMT Degradation: An Electro-Thermo-Mechanical Simulation
Author :
der Maur, Matthias Auf ; Di Carlo, A.
Author_Institution :
Dept. of Electron. Eng., Univ. of Rome Tor Vergata, Rome, Italy
Abstract :
We present fully self-consistent simulation results based on an electro-thermo-mechanical model of a typical AlGaN/GaN HEMT structure. The mechanical stress state is analyzed under different dc operating conditions in view of possible dislocation formation and movement by comparing simulated elastic energy densities and resolved shear stresses with theoretically predicted values. In particular, we find nonzero resolved shear stress on all wurtzite slip systems, with relevant values especially at high dc power. This could allow formation and movement of dislocations, leading to device degradation.
Keywords :
III-V semiconductors; aluminium compounds; dislocations; gallium compounds; high electron mobility transistors; internal stresses; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; HEMT degradation; device degradation; dislocation formation; elastic energy density; electro-thermo-mechanical model; high electron mobility transistors; mechanical stress state; nonzero resolved shear stress; wurtzite slip systems; Defects; HEMT; device simulation; dislocation glide; nitrides; strain;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2013.2267547
