DocumentCode
328500
Title
Tapered semiconductor optical amplifiers for broad-band and high-power operations
Author
Koyama, F.
Author_Institution
Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
Volume
3
fYear
1996
fDate
19-19 Sept. 1996
Firstpage
177
Abstract
1.5 /spl mu/m GaInAs-InP tapered semiconductor optical amplifiers with non-uniform quantum well structures have been studied for ultra-wideband operations. A possibility of a flat gain bandwidth exceeding 100 nm is presented by optimizing the variation of well thicknesses.
Keywords
III-V semiconductors; broadband networks; gallium arsenide; indium compounds; laser transitions; optical transmitters; quantum well lasers; wavelength division multiplexing; 1.5 mum; GaInAs-InP; GaInAs-InP tapered semiconductor optical amplifiers; broad-band operations; flat gain bandwidth; high-power operations; non-uniform quantum well structures; tapered semiconductor optical amplifiers; ultra-wideband operations; well thicknesses;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Communication, 1996. ECOC '96. 22nd European Conference on
Conference_Location
Oslo, Norway
Print_ISBN
82-423-0418-1
Type
conf
Filename
715643
Link To Document