Title :
Tapered semiconductor optical amplifiers for broad-band and high-power operations
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
1.5 /spl mu/m GaInAs-InP tapered semiconductor optical amplifiers with non-uniform quantum well structures have been studied for ultra-wideband operations. A possibility of a flat gain bandwidth exceeding 100 nm is presented by optimizing the variation of well thicknesses.
Keywords :
III-V semiconductors; broadband networks; gallium arsenide; indium compounds; laser transitions; optical transmitters; quantum well lasers; wavelength division multiplexing; 1.5 mum; GaInAs-InP; GaInAs-InP tapered semiconductor optical amplifiers; broad-band operations; flat gain bandwidth; high-power operations; non-uniform quantum well structures; tapered semiconductor optical amplifiers; ultra-wideband operations; well thicknesses;
Conference_Titel :
Optical Communication, 1996. ECOC '96. 22nd European Conference on
Conference_Location :
Oslo, Norway
Print_ISBN :
82-423-0418-1
