Title :
40-Gbit/s operation of InGaAs/InAlAs MQW electroabsorption modulator module with very low driving-voltage
Author :
Yoshino, K. ; Wakita, K. ; Kotaka, I. ; Kondo, S. ; Noguchi, Y. ; Kuwano, S. ; Takachio, N. ; Otsuji, T. ; Imai, Y. ; Enoki, T.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
Abstract :
4O-Gbit/s NRZ operation is demonstrated with the electroabsorption modulator modules using strain-compensated InGaAs/lnAlAs MQW structures. Clear eye patterns are observed with very low driving-voltages as small as 0.9 V/sub pp/.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; optical communication equipment; semiconductor quantum wells; 0.9 V; 40 Gbit/s; Gbit/s operation; InGaAs-InAlAs; InGaAs/InAlAs MQW electroabsorption modulator module; clear eye patterns; electroabsorption modulator; strain-compensated InGaAs/lnAlAs MQW structures; very low driving-voltage; very low driving-voltages;
Conference_Titel :
Optical Communication, 1996. ECOC '96. 22nd European Conference on
Conference_Location :
Oslo, Norway
Print_ISBN :
82-423-0418-1
