• DocumentCode
    328505
  • Title

    40-Gbit/s operation of InGaAs/InAlAs MQW electroabsorption modulator module with very low driving-voltage

  • Author

    Yoshino, K. ; Wakita, K. ; Kotaka, I. ; Kondo, S. ; Noguchi, Y. ; Kuwano, S. ; Takachio, N. ; Otsuji, T. ; Imai, Y. ; Enoki, T.

  • Author_Institution
    NTT Opto-Electron. Labs., Kanagawa, Japan
  • Volume
    3
  • fYear
    1996
  • fDate
    19-19 Sept. 1996
  • Firstpage
    203
  • Abstract
    4O-Gbit/s NRZ operation is demonstrated with the electroabsorption modulator modules using strain-compensated InGaAs/lnAlAs MQW structures. Clear eye patterns are observed with very low driving-voltages as small as 0.9 V/sub pp/.
  • Keywords
    III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; optical communication equipment; semiconductor quantum wells; 0.9 V; 40 Gbit/s; Gbit/s operation; InGaAs-InAlAs; InGaAs/InAlAs MQW electroabsorption modulator module; clear eye patterns; electroabsorption modulator; strain-compensated InGaAs/lnAlAs MQW structures; very low driving-voltage; very low driving-voltages;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Communication, 1996. ECOC '96. 22nd European Conference on
  • Conference_Location
    Oslo, Norway
  • Print_ISBN
    82-423-0418-1
  • Type

    conf

  • Filename
    715648
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=328505