Title :
Powerful semiconductor laser bars on 950 nm for pulse energy greater 200MJ
Author :
Goorov, Michael G. ; Dmitriev, Alexander K.
Author_Institution :
Inst. of Laser Phys., SB RAS, Novosibirsk
Abstract :
In present work the possibility of manufacturing, of semiconductor laser bars with emitting power up to 50 W at a wavelength of 950 nanometers with an injection current pulse duration up to 4 msec with high duty factor is shown.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor lasers; AlGaAs-GaAs; emitting power; high duty factor; injection current pulse duration; manufacturing; power 50 W; pulse energy; semiconductor laser bars; wavelength 950 nm; Bars; Indium gallium arsenide; Laser theory; Optical pulses; Optical pumping; Optical waveguides; Power lasers; Pump lasers; Semiconductor lasers; Surface emitting lasers; laser; power; pulse energy;
Conference_Titel :
Electronic Instrument Engineering, 2008. APEIE 2008. 9th International Conference on Actual Problems of
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-2825-0
DOI :
10.1109/APEIE.2008.4897062
