DocumentCode :
3285121
Title :
Effect of Channel Doping Levels in LDMOSFET on the Transfer Characteristic of CMOS Inverter
Author :
Kim, Nam-Soo ; Lee, Hyung-Gyoo ; Cuizhiyuan
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
356
Lastpage :
357
Keywords :
Application specific integrated circuits; CMOS digital integrated circuits; Doping; Electrical resistance measurement; Immune system; Impurities; Inverters; Low voltage; MOSFET circuits; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1596133
Filename :
1596133
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3285121
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