Title :
On Einstein spectral coefficients and effect of gain dependence on energy density in semiconductor laser
Author :
Noppe, Michael G.
Author_Institution :
Dept. of Appl. & Theor. Phys., Novosibirsk State Tech. Univ., Novosibirsk
Abstract :
Deriving Einstein spectral coefficients for the system with relaxation and Einstein coefficient far the stimulated transition for the system with relaxation resulted in influence of narrow-band radiation. The basic nonlinear effect of dependence of gain on energy density in the injection semiconductor laser is described by a new procedure. The formula far gain is specified.
Keywords :
laser theory; optical constants; semiconductor lasers; Einstein spectral coefficients; basic nonlinear effect; energy density; gain dependence; narrow-band radiation; relaxation coefficient; semiconductor laser; Equations; Frequency; Laser theory; Laser transitions; Narrowband; Physics; Semiconductor lasers; TV; gain; semiconductor laser; spectral coefficients;
Conference_Titel :
Electronic Instrument Engineering, 2008. APEIE 2008. 9th International Conference on Actual Problems of
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-2825-0
DOI :
10.1109/APEIE.2008.4897065
