Title :
Modeling of Doping Profile in Active-Silicon region of Silicon-On-Insulator transistor as a function of Channel Length
Author :
Mody, J. ; Ghosh, P.
Keywords :
CMOS technology; Capacitance; Doping profiles; Electronic mail; Electronics industry; Mathematical model; Semiconductor process modeling; Silicon on insulator technology; Spatial resolution; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1596137
