DocumentCode :
3285187
Title :
Numerical Modeling and Characterization of n-Channel 4H-SiC Double-Diffused Vertical Power MOSFET
Author :
Wu, Jianzhou ; Potbhare, Siddharth ; Goldsman, Neil ; Lelis, Aivars
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
366
Lastpage :
367
Keywords :
Doping profiles; MOSFET circuits; Numerical models; Photonic band gap; Power MOSFET; Scattering; Silicon carbide; Thermal conductivity; Thermal resistance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1596138
Filename :
1596138
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3285187
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