DocumentCode :
3285265
Title :
Modeling of MOSFET Gate leakage for High k Gate Dielectrics
Author :
Wu, Huixian ; Zhao, Yijie ; White, Marvin H.
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
380
Lastpage :
381
Keywords :
Drives; Equations; Gate leakage; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Quantum mechanics; Semiconductor device modeling; Surface waves; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1596145
Filename :
1596145
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3285265
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