Title :
A Novel Flash Memory Device Based on Recessed Channel Strucure
Author :
Han, Kyoung-Rok ; Park, Ki-Heung ; Jung, Sang-Goo ; Kim, Young-Min ; Lee, Jong-Ho
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Kyungpook Nat. Univ., Daegu
Abstract :
In this work, we propose a flash memory structure that improves V th spreading, device scalability and performance, and obtain the programming/erasing time through extensive device simulation. We also show the basic concept of the proposed structure having aggressively scaled tunneling characteristic from using nitride for control gate
Keywords :
flash memories; integrated circuit modelling; tunnelling; control gate; device simulation; flash memory device; programming-erasing time; recessed channel structure; tunneling characteristics; Chromium; Computer science; Degradation; Doping; Electronic mail; Electrons; Flash memory; Nonvolatile memory; Scalability; Tunneling;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Conference_Location :
Bethesda, MD
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1596148
