25nm Programmable Virtual Source/Drain MOSFETs Using a Twin SONOS Memory Structure
Author :
Choi, Woo Young ; Choi, Byung Yong ; Park, Ju Hee ; Kim, Dong-Won ; Lee, Choong-Ho ; Park, Donggun ; Lee, Jong Duk ; Park, Young June ; Park, Byung-Gook
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
388
Lastpage :
389
Keywords :
Doping; Electrons; Fabrication; Leakage current; Logic; MOSFETs; Region 1; Research and development; SONOS devices; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
