Title :
An Optimum Design of Saddle MOSFET with Recess Channel and Side-Gate
Author :
Park, Ki-Heung ; Han, Kyoung-Rok ; Jong-Ho Le
Keywords :
Degradation; Doping profiles; Etching; FinFETs; MOSFET circuits; Random access memory; Shape; Threshold voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1596151
