DocumentCode :
3285376
Title :
Design of silicon devices for pass-transistor-logic circuits
Author :
Vasefi, Fartash ; Abid, Z.
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
396
Lastpage :
397
Keywords :
Circuit simulation; Circuit testing; Degradation; Digital circuits; Doping; Leakage current; MOS devices; MOSFET circuits; Silicon devices; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1596153
Filename :
1596153
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3285376
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