Title :
Transverse piezoresistance in nanosize piezoresistors
Author :
Gridchin, V.A. ; Gridchin, A.V. ; Bunzina, V.J.
Abstract :
The simple phenomenological model of nanosize piezoresistor is proposed. The analytic description of the effect of shear strain, caused by free faces of the piezoresistor, on the normal strains epsiv1 and epsiv2 is presented. This allows correct interpretation of the experimental results. It is shown that when the cross-section of the p-type piezoresistor is less than 4000 nm2 the constants m11 and m12 sharply increase and the constant m44 remains practically unchanged.
Keywords :
nanotechnology; piezoresistance; piezoresistive devices; resistors; nanosize piezoresistors; p-type piezoresistor; phenomenological model; shear strain effect; transverse piezoresistance; Biosensors; Capacitive sensors; Crystals; Electrostatics; Lithium; Micromechanical devices; Nanobioscience; Piezoresistance; Piezoresistive devices; Temperature;
Conference_Titel :
Electronic Instrument Engineering, 2008. APEIE 2008. 9th International Conference on Actual Problems of
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-2825-0
DOI :
10.1109/APEIE.2008.4897083
