• DocumentCode
    3285380
  • Title

    Transverse piezoresistance in nanosize piezoresistors

  • Author

    Gridchin, V.A. ; Gridchin, A.V. ; Bunzina, V.J.

  • Volume
    01
  • fYear
    2008
  • fDate
    23-25 Sept. 2008
  • Firstpage
    181
  • Lastpage
    181
  • Abstract
    The simple phenomenological model of nanosize piezoresistor is proposed. The analytic description of the effect of shear strain, caused by free faces of the piezoresistor, on the normal strains epsiv1 and epsiv2 is presented. This allows correct interpretation of the experimental results. It is shown that when the cross-section of the p-type piezoresistor is less than 4000 nm2 the constants m11 and m12 sharply increase and the constant m44 remains practically unchanged.
  • Keywords
    nanotechnology; piezoresistance; piezoresistive devices; resistors; nanosize piezoresistors; p-type piezoresistor; phenomenological model; shear strain effect; transverse piezoresistance; Biosensors; Capacitive sensors; Crystals; Electrostatics; Lithium; Micromechanical devices; Nanobioscience; Piezoresistance; Piezoresistive devices; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Instrument Engineering, 2008. APEIE 2008. 9th International Conference on Actual Problems of
  • Conference_Location
    Novosibirsk
  • Print_ISBN
    978-1-4244-2825-0
  • Type

    conf

  • DOI
    10.1109/APEIE.2008.4897083
  • Filename
    4897083
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3285380