DocumentCode :
3285411
Title :
Effect of Graded Base Doping on the Gain of SiC BJT
Author :
Zhao, J.H. ; Zhang, J. ; Li, X. ; Sheng, K.
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
398
Lastpage :
399
Keywords :
Design optimization; Doping profiles; MOSFETs; Passivation; Performance gain; Power engineering and energy; Power engineering computing; Silicon carbide; Spontaneous emission; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1596154
Filename :
1596154
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3285411
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