• DocumentCode
    3285468
  • Title

    Development silicon of nanotechnology and technology of plasma etching silicon

  • Author

    Bogomolov, B.K.

  • Volume
    01
  • fYear
    2008
  • fDate
    23-25 Sept. 2008
  • Firstpage
    182
  • Lastpage
    182
  • Abstract
    Summary form only given. The analysis of prospects of development nanoelectronics and silicon nanotechnology is carried out. The information on a condition of works on manufacturing integrated microcircuits on technological norms 32, 45, 51, 55 and 60 nm is resulted. The basic results of plasma etching of silicon in CCl2F2/O2 in quartz reactor with teflon polymer by a covering are considered. The model of plasma chemical of etching of silicon in plasma CCl2F2/O2 in conditions of active delivery CAP is constructed at the expense of etching of teflon polymer.
  • Keywords
    carbon compounds; nanoelectronics; polymers; silicon; sputter etching; CCI2F2-O2; integrated microcircuits; nanoelectronics; plasma chemical etching; plasma etching silicon; quartz reactor; silicon nanotechnology; teflon polymer; Etching; Inductors; Manufacturing; Nanoelectronics; Nanotechnology; Plasma applications; Plasma chemistry; Plasma materials processing; Polymers; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Instrument Engineering, 2008. APEIE 2008. 9th International Conference on Actual Problems of
  • Conference_Location
    Novosibirsk
  • Print_ISBN
    978-1-4244-2825-0
  • Type

    conf

  • DOI
    10.1109/APEIE.2008.4897088
  • Filename
    4897088
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3285468