Recent advances in semiconductor vertical cavity lasers for optical communications and optical interconnects

Author

Ebeling, K.J. ; Fiedler, U. ; Michalzik, R. ; Reiner, G. ; Weigl, B.

Author_Institution

Dept. of Optoelectron., Ulm Univ., Germany

Volume

2

fYear

1996

fDate

19-19 Sept. 1996

Firstpage

81

Abstract

We discuss error free optical fiber transmission at data rates up to 10 Gbit/s using high performance InGaAs strained QW vertical cavity surface emitting laser diode (VCSEL) sources. Fabricated multi-mode VCSELs achieve 50 mW maximum output power and 47% conversion efficiency. Single-mode devices have 290 /spl mu/A threshold current, 2.7 mW maximum output power, 27% conversion efficiency and 50 dB sidemode suppression.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; ion implantation; laser cavity resonators; laser modes; optical fabrication; optical interconnections; optical transmitters; quantum well lasers; surface emitting lasers; /spl mu/A threshold current; 10 Gbit/s; 2.7 mW; 27 percent; 290 muA; 47 percent; 50 mW; InGaAs; InGaAs strained QW VCSEL laser sources; conversion efficiency; dB sidemode suppression; data rates; error free optical fiber transmission; high performance; mW maximum output power; multi-mode VCSELs; optical communications; optical interconnects; semiconductor vertical cavity lasers; single-mode devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Communication, 1996. ECOC '96. 22nd European Conference on

Conference_Location

Oslo, Norway

Print_ISBN

82-423-0418-1

Type

conf

Filename

715698