Title :
A New Low-cost Technique for Mobility Enhancement of PMOSFETs Strained by Ge Pre-amorphization Implantation for Source/Drain Extension
Author :
Xu, Qiuxia ; Duan, Xiaofong ; Qian, He ; Liu, Haihua ; Liu, Ming
Keywords :
CMOS technology; Capacitive sensors; Compressive stress; Diffraction; Electron beams; Electron mobility; Helium; MOS devices; MOSFETs; Tensile stress;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1596157
