DocumentCode
3285471
Title
A New Low-cost Technique for Mobility Enhancement of PMOSFETs Strained by Ge Pre-amorphization Implantation for Source/Drain Extension
Author
Xu, Qiuxia ; Duan, Xiaofong ; Qian, He ; Liu, Haihua ; Liu, Ming
fYear
2005
fDate
Dec. 7-9, 2005
Firstpage
404
Lastpage
405
Keywords
CMOS technology; Capacitive sensors; Compressive stress; Diffraction; Electron beams; Electron mobility; Helium; MOS devices; MOSFETs; Tensile stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2005 International
Print_ISBN
1-4244-0083-X
Type
conf
DOI
10.1109/ISDRS.2005.1596157
Filename
1596157
Link To Document