• DocumentCode
    3285519
  • Title

    Investigation of Ni Induced Deep Levels in N-Type Si by a Temperature Dependence of Piezoelectric Photothermal and Surface Photovoltage Signals

  • Author

    Sato, Shoichiro ; Fukushima, Shin-ichi ; Tanaka, Shuji ; Sakai, Kentaro ; Fukuyama, Atsuhiko ; Ikari, Tetsuo

  • fYear
    2005
  • fDate
    Dec. 7-9, 2005
  • Firstpage
    410
  • Lastpage
    411
  • Keywords
    Electric variables measurement; Glass; Indium tin oxide; Materials science and technology; Nickel; Radiative recombination; Signal generators; Silicon; Substrates; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2005 International
  • Print_ISBN
    1-4244-0083-X
  • Type

    conf

  • DOI
    10.1109/ISDRS.2005.1596160
  • Filename
    1596160
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3285519