Reliability of 1300-nm spot-size converted lasers for low-cost optical module used in fiber-to-the-home

Author

Oohashi, H. ; Fukuda, M. ; Kondo, Y. ; Wada, M. ; Sakai, Y. ; Tohmori, Y.

Author_Institution

NTT Opto-Electron. Labs., Kanagawa, Japan

Volume

2

fYear

1996

fDate

19-19 Sept. 1996

Firstpage

115

Abstract

We report the degradation mode of a InP strained QW spot-size converted (SSC) laser. We succeed in suppressing a buried heterointerface degradation with a combination of MOVPE growth and dry etching techniques (2-inch wafer process). The far-field patterns and wide-temperature operation required for low-cost system application scarcely changed during degradation, and the device life is at least 10/sup 5/ hours at 60/spl deg/C, 10 mW.

Keywords

III-V semiconductors; indium compounds; laser modes; laser reliability; laser transitions; life testing; optical fibre subscriber loops; optical testing; optical transmitters; quantum well lasers; semiconductor device reliability; semiconductor device testing; semiconductor growth; vapour phase epitaxial growth; 10 mW; 10000 h; 1300 nm; 2 in; 60 C; InP; InP strained QW spot-size converted laser diode; MOVPE growth; buried heterointerface degradation; degradation; degradation mode; device life; dry etching techniques; far-field patterns; fiber-to-the-home; low-cost optical module; low-cost system application; nm spot-size converted laser reliability; wide-temperature operation;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Communication, 1996. ECOC '96. 22nd European Conference on

Conference_Location

Oslo, Norway

Print_ISBN

82-423-0418-1

Type

conf

Filename

715705