DocumentCode :
3285538
Title :
Current oscillations during quasi-stationary state decay in double-barrier structure
Author :
Peisakhovich, J.G. ; Shtygashev, A.A.
Volume :
01
fYear :
2008
fDate :
23-25 Sept. 2008
Firstpage :
182
Lastpage :
182
Abstract :
Summary form only given. Numerical modeling of the decay of quasi-stationary state in double-barrier structure and decay current oscillations are considered. Example of calculation for a model is presented.
Keywords :
current fluctuations; quantum well devices; current oscillations; decay current oscillations; double-barrier structure; numerical modeling; quasi-stationary state decay; Etching; Inductors; Nanotechnology; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma measurements; Plasma temperature; Silicon; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Instrument Engineering, 2008. APEIE 2008. 9th International Conference on Actual Problems of
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-2825-0
Type :
conf
DOI :
10.1109/APEIE.2008.4897092
Filename :
4897092
Link To Document :
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