DocumentCode :
3285566
Title :
Carrier recombination mechanism at SiO2/Si interface studied by a photo-thermal and a surface photo-voltage spectroscopy
Author :
Saisho, T. ; Sakai, K. ; Hayashi, H. ; Sato, S. ; Fukuyama, A. ; Suemitsu, M. ; Ikari, T.
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
414
Lastpage :
415
Keywords :
Absorption; Electron optics; Etching; Optical films; Radiative recombination; Scanning electron microscopy; Semiconductor films; Spectroscopy; Spontaneous emission; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1596162
Filename :
1596162
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3285566
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