DocumentCode
3285610
Title
Influence of temperature on spectral dependence of optical absorption in crystal Bi12 SiO20
Author
Akrestina, A.S. ; Vishnev, A.S. ; Kisteneva, M.G. ; Shandarov, S.M. ; Averkina, M.J. ; Bas´ko, N.S. ; Gridneva, E.S.
Volume
01
fYear
2008
fDate
23-25 Sept. 2008
Firstpage
183
Lastpage
183
Abstract
The spectral dependences of optical absorption in the wavelength range 450...1100 nm and temperature range 23...70degC for the bismuth silicate crystal are considered. To describe the experimental dependencies of the impurity absorption the model of photo-excitation of electrons from deep levels to conduction band was used.
Keywords
bismuth compounds; conduction bands; deep levels; impurity absorption spectra; infrared spectra; photoexcitation; visible spectra; Bi12SiO20; bismuth silicate crystal; conduction band; deep levels; impurity absorption; optical absorption; photoexcitation; spectral dependence; temperature 23 degC to 70 degC; wavelength 450 nm to 1100 nm; Absorption; Biomedical optical imaging; Bismuth; Databases; Discharges; Economic indicators; Medical diagnosis; Optical surface waves; Piezoelectric materials; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Instrument Engineering, 2008. APEIE 2008. 9th International Conference on Actual Problems of
Conference_Location
Novosibirsk
Print_ISBN
978-1-4244-2825-0
Type
conf
DOI
10.1109/APEIE.2008.4897095
Filename
4897095
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