A Silicon-based Light Emitter

Author

Zhang, Yanli ; Zhao, Yijie ; Wildeson, Isaac ; White, Marvin H. ; Fleischman, Zackery ; Dierolf, Volkmar

Author_Institution

Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA

fYear

2005

fDate

7-9 Dec. 2005

Firstpage

426

Lastpage

427

Abstract

Although silicon is the leading semiconductor in the microelectronics industry, it is unable to perform as well in the optical area due to its indirect band gap and the lack of a strong electro-optic effect. Among the different approaches developed to overcome the intrinsic low efficiency of silicon as a light emitter, quantum confinement and rare earth doping of silicon (Fujii et al., 1997) have dominated the scientific scenario of silicon-based microphotonics. Especially, direct-current-injection excitation of erbium ions in silicon dioxide structure has showed significant luminescence at 1.54 mum (Castagna et al., 2003), which generated significant renewed interest in the potential of efficient silicon-base light emitters for communications applications

Keywords

doping; electro-optical devices; energy gap; erbium; light emitting devices; silicon; silicon compounds; direct-current-injection excitation; electrooptic effect; indirect band gap; microelectronics industry; optical area; quantum confinement; rare earth doping; silicon-based light emitter; silicon-based microphotonics; Doping; Erbium; Lead compounds; Light emitting diodes; Luminescence; Microelectronics; Photonic band gap; Potential well; Silicon compounds; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2005 International

Conference_Location

Bethesda, MD

Print_ISBN

1-4244-0083-X

Type

conf

DOI

10.1109/ISDRS.2005.1596168

Filename

1596168