DocumentCode
3285773
Title
Influence of SOI-generated stress on BiCMOS performance
Author
Johansson, Ted ; Malm, B. Gunnar ; Norström, Hans ; Smith, Ulf ; Östling, Mikael
fYear
2005
fDate
Dec. 7-9, 2005
Firstpage
444
Lastpage
445
Keywords
BiCMOS integrated circuits; Capacitance; Capacitive sensors; Compressive stress; Diffusion tensor imaging; Etching; Information technology; Laboratories; Materials science and technology; Microelectronics;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2005 International
Print_ISBN
1-4244-0083-X
Type
conf
DOI
10.1109/ISDRS.2005.1596177
Filename
1596177
Link To Document