DocumentCode
3285811
Title
Simulation Study of Source/Drain Doping Profile for 10nm Gate Length Fully Depleted N-type SOI MOSFET
Author
Jin, Yawei ; Ma, Lei ; Zeng, Chang ; Barlage, Doug
fYear
2005
fDate
Dec. 7-9, 2005
Firstpage
448
Lastpage
449
Keywords
Capacitance; Computational modeling; Degradation; Doping profiles; Electrodes; Electron devices; Immune system; MOSFET circuits; Silicon; USA Councils;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2005 International
Print_ISBN
1-4244-0083-X
Type
conf
DOI
10.1109/ISDRS.2005.1596179
Filename
1596179
Link To Document