DocumentCode
3285828
Title
Basic Study of Plasma Wave Interactions in GaAs Interdigital- Gated HEMT Devices from Microwave up to THz Frequencies
Author
Hashim, Abdul Manaf ; Kasai, Seiya ; Hasegawa, Hideki ; Hashizume, Tamotsu
Author_Institution
Graduate Sch. of Inf. Sci. & Technol., Hokkaido Univ., Sapporo
fYear
2005
fDate
7-9 Dec. 2005
Firstpage
450
Lastpage
451
Abstract
The purpose of this paper is to investigate theoretically and experimentally possible interactions between the surface plasma wave in drifting carriers in 2D electron gas (2DEG) and electromagnetic space harmonics in a GaAs interdigital-gated HEMT device from microwave to THz frequencies
Keywords
III-V semiconductors; gallium arsenide; high electron mobility transistors; plasma waves; two-dimensional electron gas; 2D electron gas; GaAs; THz frequency; electromagnetic space harmonics; interdigital-gated HEMT; microwave frequencies; plasma wave interactions; surface plasma wave; Admittance measurement; Fingers; Frequency; Gallium arsenide; HEMTs; Microwave devices; Permittivity; Plasma devices; Plasma waves; Surface waves;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2005 International
Conference_Location
Bethesda, MD
Print_ISBN
1-4244-0083-X
Type
conf
DOI
10.1109/ISDRS.2005.1596180
Filename
1596180
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