DocumentCode
32859
Title
Backing gallium nitride
Volume
49
Issue
14
fYear
2013
fDate
July 4 2013
Firstpage
852
Lastpage
852
Abstract
Back barriers have been shown to improve the performance of GaN HEMTs and dispersion at 4 GHz is possible for free-standing examples.
Keywords
III-V semiconductors; gallium compounds; high electron mobility transistors; microwave field effect transistors; wide band gap semiconductors; GaN; HEMT; back barrier; carbon-doped layer; free-standing gallium nitride; frequency 4 GHz; low-threading dislocation density substrates; proximity effects; three-terminal breakdown;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2013.2074
Filename
6557236
Link To Document