• DocumentCode
    3286103
  • Title

    A novel CMOS color pixel for vision chips

  • Author

    Fu, Qiuyu ; Zhang, Wancheng ; Lin, Qingyu ; Wu, Nanjian

  • Author_Institution
    Inst. of Semicond., Chinese Acad. of Sci., Beijing, China
  • fYear
    2009
  • fDate
    25-28 Oct. 2009
  • Firstpage
    1640
  • Lastpage
    1643
  • Abstract
    This paper presents a novel CMOS color pixel with a 2D metal-grating structure for real-time vision chips. It consists of an N-well/P-substrate diode without salicide and 2D metal-grating layers on the diode. The periods of the 2D metal structure are controlled to realize color filtering. We implemented sixteen kinds of the pixels with the different metal-grating structures in a standard 0.18 ¿m CMOS process. The measured results demonstrate that the N-well/P-substrate diode without salicide and with the 2D metal-grating structures can serve as the high speed RGB color active pixel sensor for real-time vision chips well.
  • Keywords
    CMOS image sensors; diodes; image colour analysis; 2D metal structure; 2D metal-grating structure; CMOS color pixel; CMOS process; N-well/P-substrate diode; color filtering; high speed RGB color active pixel sensor; real time vision chips; size 0.18 mum; CMOS image sensors; CMOS process; Color; Filtering; Filters; Image sensors; Photodiodes; Pixel; Semiconductor diodes; Sensor arrays;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensors, 2009 IEEE
  • Conference_Location
    Christchurch
  • ISSN
    1930-0395
  • Print_ISBN
    978-1-4244-4548-6
  • Electronic_ISBN
    1930-0395
  • Type

    conf

  • DOI
    10.1109/ICSENS.2009.5398508
  • Filename
    5398508