Title :
A micromachined silicon capacitive temperature sensor for radiosonde applications
Author :
Ma, Hong-Yu ; Huang, Qing-An ; Qin, Ming ; Lu, TingTing
Author_Institution :
Key Lab. of MEMS of Minist. of Educ., Southeast Univ., Nanjing, China
Abstract :
A novel silicon capacitive temperature sensor implemented with micromachined multilayer cantilevers is presented. The multi-layered sensor structure has been fabricated with SOI wafers by a 4-mask process. Using this structure, the low-power dissipation and wide temperature range can be achieved. For the present sensor, the temperature range is from -70°C to 100°C with the sensitivity of 7 fF/°C. This makes it suitable to serve as a temperature sensor for low-power and wide temperature range applications.
Keywords :
cantilevers; capacitive sensors; micromachining; microsensors; multilayers; radiosondes; silicon-on-insulator; temperature sensors; SOI wafers; Si; low-power dissipation; micromachined multilayer cantilevers; micromachined silicon capacitive temperature sensor; multilayered sensor structure; radiosonde applications; temperature -70 degC to 100 degC; Capacitance; Capacitive sensors; Dielectric materials; Electrodes; Micromechanical devices; Nonhomogeneous media; Silicon; Temperature distribution; Temperature sensors; Thermal stresses;
Conference_Titel :
Sensors, 2009 IEEE
Conference_Location :
Christchurch
Print_ISBN :
978-1-4244-4548-6
Electronic_ISBN :
1930-0395
DOI :
10.1109/ICSENS.2009.5398513
