Design considerations for monolithic Si-based RF VCOs in wireless single-chip systems

Author

Raman, Sanjay ; Sanderson, David I. ; Klein, Adam S.

Author_Institution

Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA

fYear

2003

fDate

2003

Firstpage

172

Lastpage

174

Abstract

The paper discusses a number of important considerations in the design of differential VCO known as -G_M LC-tank VCO in Si technologies. The availability of multiple interconnect layers, culminating in a thick electroplated Cu (bump) layer, has led to significant improvements in the Q-factor of tank circuit inductors. In addition, the use of symmetric differential inductor structures can result in substantial improvements in Q through the enhancement of mutual coupling.

Keywords

Q-factor; copper; microwave oscillators; silicon; thick film inductors; voltage-controlled oscillators; Q-factor; bump layer; differential VCO; monolithic RF VCO; multiple interconnect layers; mutual coupling; silicon-based RF VCO; symmetric differential inductor structures; tank circuit inductors; thick electroplated copper layer; wireless single-chip systems; BiCMOS integrated circuits; Germanium silicon alloys; Inductors; Q factor; Radio frequency; Silicon germanium; System-on-a-chip; Tuning; Varactors; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Communication Technology, 2003. IEEE Topical Conference on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-8196-3

Type

conf

DOI

10.1109/WCT.2003.1321474

Filename

1321474