Fabrication and analysis of new MEMS IF filters

Author

Motiee, Mehrnaz ; Khajepur, Amir ; Mansour, Raafat R.

Author_Institution

Waterloo Univ., Ont., Canada

fYear

2003

fDate

15-17 Oct. 2003

Firstpage

178

Lastpage

179

Abstract

Currently, the global interest in the wireless communication field demands the integration of RF transceivers on a single silicon chip. Filters have a major role in the construction of high performance transceivers. Bandpass filters are one of the most important elements in frequency selective circuits. This paper introduces new cantilever beam resonators and the novel V shape coupling element which is used to couple two double clamped resonators together These elements are used to design new MEMS bandpass filters operating in intermediate frequency (IF) range, from 1 MHz to 50 MHz.

Keywords

band-pass filters; micromechanical devices; resonator filters; transceivers; 1 to 50 MHz; MEMS IF filters; RF transceivers; V shape coupling element; bandpass filters; cantilever beam resonators; double clamped resonators; fabrication; frequency selective circuits; high performance transceivers; intermediate frequency; wireless communication; Band pass filters; Coupling circuits; Fabrication; Micromechanical devices; Optical coupling; Radio frequency; Resonator filters; Silicon; Transceivers; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Communication Technology, 2003. IEEE Topical Conference on

Print_ISBN

0-7803-8196-3

Type

conf

DOI

10.1109/WCT.2003.1321477

Filename

1321477