Title :
Experimental study on the dielectrostriction of SiO2 with a micro-fabricated cantilever
Author :
Huang, Jian-Qiu ; Huang, Qing-An ; Qin, Ming ; Dong, Wei-Jie ; Chen, Xiao-Wei
Author_Institution :
Key Lab. of MEMS of the Minist. of Educ., Southeast Univ., Nanjing, China
Abstract :
The dielectrostriction effect of thermal SiO2 was experimentally studied in this paper. A beam bending method was used to apply mechanical stresses on the dielectric and the dielectric constant was characterized by the capacitance of a sandwich structure. A model for extracting the dielectrostriction coefficient, M12, was developed and special samples for the measurements were fabricated. According to the measurements the dielectrostriction coefficient, M12, of thermal SiO2 is -0.19 ± 0.01 × 10-21m2/V2.
Keywords :
cantilevers; electrostriction; microfabrication; permittivity; silicon compounds; SiO2; beam bending; dielectric constant; dielectrostriction; mechanical stresses; microfabricated cantilever; sandwich structure; Capacitance; Capacitive sensors; Capacitors; Deformable models; Dielectric constant; Dielectric measurements; Mechanical sensors; Sandwich structures; Testing; Thermal stresses;
Conference_Titel :
Sensors, 2009 IEEE
Conference_Location :
Christchurch
Print_ISBN :
978-1-4244-4548-6
Electronic_ISBN :
1930-0395
DOI :
10.1109/ICSENS.2009.5398528
